Diode configuration1 To seriesParallel_if_Time voltage_Forward_vf1.1 V @ 200 mAOperating temperature_Structure150°C(Maximum)Reverse recovery time_trr–Parallel_vr_Time current_Reverse leakage10 nA @ 180 VVendor device packagingSOT-23-3Minimum quantity1.0Telecommunications_dc_Inverted_vr_Maximum value200 VDot matrix_Average rectification_io_Per diode200mAMounting typeSurface mount typeSquare_CasingTO-236-3,SC-59,SOT-23-3PackagingStatic(TR),Shear band(CT)Series–DiodeSpanPlateBidirectional小信号 =< 200mA(Io),任意Bidirectionalqty0.0
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