Diode configuration2 IndividualParallel_if_Time voltage_Forward_vf1.1 V @ 100 mAOperating temperature_Structure150°C(Maximum)Reverse recovery time_trr50 nsParallel_vr_Time current_Reverse leakage150 nA @ 250 VVendor device packagingSOT-143BMinimum quantity1.0Telecommunications_dc_Inverted_vr_Maximum value300 VDot matrix_Average rectification_io_Per diode250mA(DC)Mounting typeSurface mount typeSquare_CasingTO-253-4,TO-253AAPackagingStatic(TR),Shear band(CT)Series–DiodeSpanPlateBidirectional快速恢复 = 200mA(Io)qty0.0