Diode configuration3 IndividualParallel_if_Time voltage_Forward_vf1.25 V @ 150 mAOperating temperature_Structure-65°C ~ 150°CReverse recovery time_trr4 nsParallel_vr_Time current_Reverse leakage100 nA @ 70 VVendor device packagingSOT-363Minimum quantity1.0Telecommunications_dc_Inverted_vr_Maximum value80 VDot matrix_Average rectification_io_Per diode250mAMounting typeSurface mount typeSquare_Casing6-TSSOP,SC-88,SOT-363PackagingStatic(TR),Shear band(CT)Series–DiodeSpanPlateBidirectional快速恢复 = 200mA(Io)qty0.0