Diode configuration2 IndividualParallel_if_Time voltage_Forward_vf1 V @ 200 mAOperating temperature_Structure150°C(Maximum)Reverse recovery time_trr6 nsParallel_vr_Time current_Reverse leakage100 nA @ 120 VVendor device packagingSOT-143BMinimum quantity1.0Telecommunications_dc_Inverted_vr_Maximum value60 VDot matrix_Average rectification_io_Per diode200mA(DC)Mounting typeSurface mount typeSquare_CasingTO-253-4,TO-253AAPackagingStatic(TR),Shear band(CT)Series–DiodeSpanPlateBidirectional小信号 =< 200mA(Io),任意Bidirectionalqty0.0
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