operaTingTemperaTure–productStatuSNot applicable for new designsfeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson24 mΩ @ 8.5A,10VvgsMax3.1W(Ta)paCkageCase–packageStatic(TR),Shear band(CT)vgs12 nC @ 4.5 VpowerDissipationmax8-SOIC(0.154″,3.90mm Wide)technologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson2.5V,10VdrainTosourcevolTagevdss30 Vseries–vgsthMaxid±12Vqty0.0CurrentContinuousdrainid25°C8.5A(Ta)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid1.5V @ 250µAFetFeature8-SOICsupplierDevicepackage–gateChargeqgmaxvgs1100 pF @ 15 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty3000.0