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NCP1380BDR2G
The pictures are for reference only.
  • NCP1380BDR2G

FDD86110

Description
Frequency : ON
Square :TO252
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:12500
MOQ:2500
Configuration :22+
Standard packaging :2500
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$1.48
Total
3703.25
Detailed Parameters

operaTingTemperaTureproductStatuSOn salefeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson10.2 mΩ @ 12.5A,10VvgsMax3.1W(Ta),127W(Tc)paCkageCasepackageStatic(TR),Shear band(CT)vgs35 nC @ 10 VpowerDissipationmaxTO-252-3,DPak(2 Lead + 接片),SC-63technologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson6V,10VdrainTosourcevolTagevdss100 VseriesPowerTrench®vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C12.5A(Ta),50A(Tc)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid4V @ 250µAFetFeatureTO-252AAsupplierDevicepackagegateChargeqgmaxvgs2265 pF @ 50 VvoltageCoupledtogateChargeqgmaxvgsmounTingTypeminQty1.0

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