operaTingTemperaTure–productStatuSOn salefeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson24 mΩ @ 9A,10VvgsMax4.1W(Ta),28W(Tc)paCkageCase–packageStatic(TR),Shear band(CT)vgs25 nC @ 10 VpowerDissipationmax8-PowerWDFNtechnologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson4.5V,10VdrainTosourcevolTagevdss100 VseriesAlphaMOSvgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C9A(Ta),23A(Tc)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid2.6V @ 250µAFetFeature8-DFN-EP(3.3×3.3)supplierDevicepackage–gateChargeqgmaxvgs1170 pF @ 50 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0