operaTingTemperaTure–productStatuSNot applicable for new designsfeTTypeP DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson115 mΩ @ 2.6A,10VvgsMax1.4W(Ta)paCkageCase–packageStatic(TR),Shear band(CT)vgs7.2 nC @ 10 VpowerDissipationmax3-SMD,SOT-23-3 VariabletechnologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson2.5V,10VdrainTosourcevolTagevdss30 Vseries–vgsthMaxid±12Vqty0.0CurrentContinuousdrainid25°C2.6A(Ta)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid1.4V @ 250µAFetFeatureSOT-23-3supplierDevicepackage–gateChargeqgmaxvgs315 pF @ 15 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0