operaTingTemperaTure–productStatuSNot applicable for new designsfeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson3 mΩ @ 20A，10VvgsMax6.2W（Ta），42W（Tc）paCkageCase–packageStatic（TR）,Shear band（CT）vgs24 nC @ 10 VpowerDissipationmax8-PowerSMD，Flat leadtechnologyMOSFET（Metal-oxide-semiconductor）driVeVoltagemaxrdson4.5V，10VdrainTosourcevolTagevdss30 Vseries–vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C36A（Ta），85A（Tc）inputCapaCitanCeCissmaxvds-55°C ~ 150°C（TJ）rdsOnmaxid2.2V @ 250µAFetFeature8-DFN（5×6）supplierDevicepackage–gateChargeqgmaxvgs1590 pF @ 15 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0