Diode configuration3 IndividualParallel_if_Time voltage_Forward_vf1.25 V @ 150 mAOperating temperature_Structure150°C(Maximum)Reverse recovery time_trr4 nsParallel_vr_Time current_Reverse leakage500 nA @ 80 VVendor device packagingSOT-666Minimum quantity1.0Telecommunications_dc_Inverted_vr_Maximum value100 VDot matrix_Average rectification_io_Per diode200mA(DC)Mounting typeSurface mount typeSquare_CasingSOT-563,SOT-666PackagingStatic(TR),Shear band(CT)Series–DiodeSpanPlateBidirectional小信号 =< 200mA(Io),任意Bidirectionalqty0.0