Diode configuration3 IndividualParallel_if_Time voltage_Forward_vf1.25 V @ 200 mAOperating temperature_Structure150°C(Maximum)Reverse recovery time_trr50 nsParallel_vr_Time current_Reverse leakage100 nA @ 200 VVendor device packaging6-TSOPMinimum quantity10000.0Telecommunications_dc_Inverted_vr_Maximum value200 VDot matrix_Average rectification_io_Per diode200mA(DC)Mounting typeSurface mount typeSquare_CasingSC-74,SOT-457PackagingStatic(TR)Series–DiodeSpanPlateBidirectional小信号 =< 200mA(Io),任意Bidirectionalqty0.0