Diode configuration1 Common cathodeParallel_if_Time voltage_Forward_vf800 mV @ 100 mAOperating temperature_Structure-65°C ~ 150°CReverse recovery time_trr5 nsParallel_vr_Time current_Reverse leakage2 µA @ 25 VVendor device packagingSOT-23-3Minimum quantity1.0Telecommunications_dc_Inverted_vr_Maximum value30 VDot matrix_Average rectification_io_Per diode200mA(DC)Mounting typeSurface mount typeSquare_CasingTO-236-3,SC-59,SOT-23-3PackagingStatic(TR),Shear band(CT)Series–DiodeSpanSchottkyBidirectional小信号 =< 200mA(Io),任意Bidirectionalqty0.0
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