Diode configuration2 IndividualParallel_if_Time voltage_Forward_vf800 mV @ 100 mAOperating temperature_Structure125°C(Maximum)Reverse recovery time_trr5 nsParallel_vr_Time current_Reverse leakage2 µA @ 25 VVendor device packagingSOT-143BMinimum quantity1.0Telecommunications_dc_Inverted_vr_Maximum value30 VDot matrix_Average rectification_io_Per diode200mA(DC)Mounting typeSurface mount typeSquare_CasingTO-253-4,TO-253AAPackagingStatic(TR),Shear band(CT)Series–DiodeSpanSchottkyBidirectional小信号 =< 200mA(Io),任意Bidirectionalqty0.0