Diode configuration1 To seriesParallel_if_Time voltage_Forward_vf1.25 V @ 150 mAOperating temperature_Structure-65°C ~ 150°CReverse recovery time_trr4 nsParallel_vr_Time current_Reverse leakage2.5 µA @ 75 VVendor device packagingSOT-23-3Minimum quantity1.0Telecommunications_dc_Inverted_vr_Maximum value75 VDot matrix_Average rectification_io_Per diode300mA(DC)Mounting typeSurface mount typeSquare_CasingTO-236-3,SC-59,SOT-23-3PackagingStatic(TR),Shear band(CT)Series–DiodeSpanPlateBidirectional快速恢复 = 200mA(Io)qty0.0