Diode configuration1 To seriesParallel_if_Time voltage_Forward_vf1.2 V @ 100 mAOperating temperature_Structure150°C(Maximum)Reverse recovery time_trr4 nsParallel_vr_Time current_Reverse leakage100 nA @ 70 VVendor device packagingSMD3Minimum quantity1.0Telecommunications_dc_Inverted_vr_Maximum value80 VDot matrix_Average rectification_io_Per diode100mAMounting typeSurface mount typeSquare_CasingTO-236-3,SC-59,SOT-23-3PackagingStatic(TR),Shear band(CT)Series–DiodeSpanPlateBidirectional小信号 =< 200mA(Io),任意Bidirectionalqty0.0