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NCP1380BDR2G
The pictures are for reference only.
  • NCP1380BDR2G

DMN2004WK-7

Description
Frequency : DIODES
Square :SOT323
Sealed :Transistor-fet-mosfet-With box
Spot Stocks
Inventory:6000
MOQ:3000
Configuration :21+
Standard packaging :3000
Unit price (including 13% tax)
Purchase quantity
The purchase quantity must not exceed the inventory quantity
The purchase quantity must not be less than the minimum order quantity
Unit-Price
$0.02
Total
58.2
Detailed Parameters

operaTingTemperaTureproductStatuSOn salefeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson550 mΩ @ 540mA,4.5VvgsMax200mW(Ta)paCkageCasepackageStatic(TR),Shear band(CT)vgspowerDissipationmaxSC-70,SOT-323technologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson1.8V,4.5VdrainTosourcevolTagevdss20 VseriesAutomotive, AEC-Q101vgsthMaxid±8Vqty0.0CurrentContinuousdrainid25°C540mA(Ta)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid1V @ 250µAFetFeatureSOT-323supplierDevicepackagegateChargeqgmaxvgs150 pF @ 16 VvoltageCoupledtogateChargeqgmaxvgsmounTingTypeminQty1.0

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