operaTingTemperaTure–productStatuSTripfeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson3 Ω @ 100mA,4.5VvgsMax350mW(Ta)paCkageCase–packageStatic(TR),Shear band(CT)vgs–powerDissipationmax3-XFDFNtechnologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson1.5V,4.5VdrainTosourcevolTagevdss20 Vseries–vgsthMaxid±10Vqty0.0CurrentContinuousdrainid25°C230mA(Ta)inputCapaCitanCeCissmaxvds-55°C ~ 150°C(TJ)rdsOnmaxid1.1V @ 250µAFetFeatureX2-DFN1006-3supplierDevicepackage–gateChargeqgmaxvgs14.1 pF @ 15 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty0.0