operaTingTemperaTure–productStatuSOn salefeTTypeP DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson7.5 mΩ @ 10A，10VvgsMax2.18W（Ta）paCkageCase–packageStatic（TR）,Shear band（CT）vgs126.2 nC @ 10 VpowerDissipationmax8-PowerTDFNtechnologyMOSFET（Metal-oxide-semiconductor）driVeVoltagemaxrdson4.5V，10VdrainTosourcevolTagevdss30 Vseries–vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C14.5A（Ta）inputCapaCitanCeCissmaxvds-55°C ~ 150°C（TJ）rdsOnmaxid2.1V @ 250µAFetFeaturePowerDI5060-8supplierDevicepackage–gateChargeqgmaxvgs6234 pF @ 15 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0