operaTingTemperaTure–productStatuSOn salefeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsThrough-holeminRdson4 mΩ @ 121A,10VvgsMax333W(Tc)paCkageCase–packageSolid statevgs196 nC @ 10 VpowerDissipationmaxTO-220-3technologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson10VdrainTosourcevolTagevdss40 VseriesHEXFET®vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C202A(Tc)inputCapaCitanCeCissmaxvds-55°C ~ 175°C(TJ)rdsOnmaxid4V @ 250µAFetFeatureTO-220ABsupplierDevicepackage–gateChargeqgmaxvgs5669 pF @ 25 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0