operaTingTemperaTureTO-220ABpaCkageCase–packageSolid statevgs180 nC @ 10 VpowerDissipationmaxThrough-holetechnologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson10VdrainTosourcevolTagevdss55 VfeTTypeP DiscontinuedseriesHEXFET®vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C74A(Tc)minRdson20 mΩ @ 38A,10VinputCapaCitanCeCissmaxvds200W(Tc)rdsOnmaxid4V @ 250µAFetFeature-55°C ~ 175°C(TJ)supplierDevicepackage–gateChargeqgmaxvgs3400 pF @ 25 VmounTingTypeTO-220-3partStatuSOn salevgsMax–minQty1.0