operaTingTemperaTure–productStatuSOn salefeTTypeP DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsThrough-holeminRdson60 mΩ @ 24A,10VvgsMax200W(Tc)paCkageCase–packageSolid statevgs180 nC @ 10 VpowerDissipationmaxTO-220-3technologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson10VdrainTosourcevolTagevdss100 VseriesHEXFET®vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C40A(Tc)inputCapaCitanCeCissmaxvds-55°C ~ 175°C(TJ)rdsOnmaxid4V @ 250µAFetFeatureTO-220ABsupplierDevicepackage–gateChargeqgmaxvgs2700 pF @ 25 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0