operaTingTemperaTure–productStatuSTripfeTTypeP DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsThrough-holeminRdson60 mΩ @ 16A，10VvgsMax3.8W（Ta），110W（Tc）paCkageCase–packageSolid statevgs63 nC @ 10 VpowerDissipationmaxTO-262-3，Long lead，I²Pak，TO-262AAtechnologyMOSFET（Metal-oxide-semiconductor）driVeVoltagemaxrdson10VdrainTosourcevolTagevdss55 VseriesHEXFET®vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C31A（Tc）inputCapaCitanCeCissmaxvds-55°C ~ 175°C（TJ）rdsOnmaxid4V @ 250µAFetFeatureTO-262supplierDevicepackage–gateChargeqgmaxvgs1200 pF @ 25 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty0.0