operaTingTemperaTure–productStatuSOn salefeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsThrough-holeminRdson4.5 mΩ @ 75A,10VvgsMax370W(Tc)paCkageCase–packageSolid statevgs210 nC @ 10 VpowerDissipationmaxTO-220-3technologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson10VdrainTosourcevolTagevdss100 VseriesHEXFET®vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C120A(Tc)inputCapaCitanCeCissmaxvds-55°C ~ 175°C(TJ)rdsOnmaxid4V @ 250µAFetFeatureTO-220ABsupplierDevicepackage–gateChargeqgmaxvgs9620 pF @ 50 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0