operaTingTemperaTure–productStatuSOn salefeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsSurface mount typeminRdson9 mΩ @ 58A,10VvgsMax230W(Tc)paCkageCase–packageStatic(TR),Shear band(CT)vgs120 nC @ 10 VpowerDissipationmaxTO-263-3,D²Pak(2 Lead + 接片),TO-263ABtechnologyMOSFET(Metal-oxide-semiconductor)driVeVoltagemaxrdson10VdrainTosourcevolTagevdss100 VseriesHEXFET®vgsthMaxid±20Vqty0.0CurrentContinuousdrainid25°C97A(Tc)inputCapaCitanCeCissmaxvds-55°C ~ 175°C(TJ)rdsOnmaxid4V @ 150µAFetFeaturePG-TO263-3supplierDevicepackage–gateChargeqgmaxvgs4820 pF @ 50 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0