Diode configuration1 Common cathodeParallel_if_Time voltage_Forward_vf910 mV @ 5 AOperating temperature_Structure-55°C ~ 175°CReverse recovery time_trr–Parallel_vr_Time current_Reverse leakage50 µA @ 200 VVendor device packagingTO-252-3Minimum quantity1.0Telecommunications_dc_Inverted_vr_Maximum value200 VDot matrix_Average rectification_io_Per diode5AMounting typeSurface mount typeSquare_CasingTO-252-3,DPak(2 Lead + 接片),SC-63PackagingStatic(TR),Shear band(CT)Series–DiodeSpanSchottkyBidirectional快速恢复 = 200mA(Io)qty0.0