Diode configuration1 To seriesParallel_if_Time voltage_Forward_vf1.1 V @ 100 mAOperating temperature_Structure-55°C ~ 150°CReverse recovery time_trr4 nsParallel_vr_Time current_Reverse leakage3 µA @ 100 VVendor device packagingSOT-23-3(TO-236)Minimum quantity1.0Telecommunications_dc_Inverted_vr_Maximum value100 VDot matrix_Average rectification_io_Per diode200mA(DC)Mounting typeSurface mount typeSquare_CasingTO-236-3,SC-59,SOT-23-3PackagingStatic(TR),Shear band(CT)Series–DiodeSpanPlateBidirectional小信号 =< 200mA(Io),任意Bidirectionalqty0.0