operaTingTemperaTure–productStatuSTripfeTTypeN DiscontinuedvoltageCoupledtoinputCapaCitanCeCissmaxvdsThrough-holeminRdson10.5 Ω @ 1.25A，10VvgsMax3W（Ta），50W（Tc）paCkageCase–packageSolid statevgs34 nC @ 10 VpowerDissipationmaxTO-3PLtechnologyMOSFET（Metal-oxide-semiconductor）driVeVoltagemaxrdson10VdrainTosourcevolTagevdss1500 Vseries–vgsthMaxid±30Vqty0.0CurrentContinuousdrainid25°C2.5A（Ta）inputCapaCitanCeCissmaxvds150°C（TJ）rdsOnmaxid–FetFeatureTO-3P（L）supplierDevicepackage–gateChargeqgmaxvgs650 pF @ 30 VvoltageCoupledtogateChargeqgmaxvgs–mounTingType–minQty1.0