Diode configuration1 Common cathodeParallel_if_Time voltage_Forward_vf470 mV @ 500 mAOperating temperature_Structure150°C(Maximum)Reverse recovery time_trr13 nsParallel_vr_Time current_Reverse leakage100 µA @ 40 VVendor device packagingTO-236ABMinimum quantity1.0Telecommunications_dc_Inverted_vr_Maximum value40 VDot matrix_Average rectification_io_Per diode500mAMounting typeSurface mount typeSquare_CasingTO-236-3,SC-59,SOT-23-3PackagingStatic(TR),Shear band(CT)Series–DiodeSpanSchottkyBidirectional快速恢复 = 200mA(Io)qty0.0
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